%0 Journal Article
%T EXTRACTION OF POLARIZATION-INDUCED CHARGE DENSITY INMODULATION-DOPED AlxGa1-xN/GaN HETEROSTRUCTURETHROUGH THE SIMULATION OF THE SCHOTTKY CAPACITANCE-VOLTAGE CHARACTERISTICS<br>用肖特基电容电压特性数值模拟法确定调制掺杂AlxGa1-xN/GaN异质结中的极化电荷
%A ZHOU YU-GANG
%A SHEN BO
%A LIU JIE
%A ZHOU HUI-MEI
%A YU HUI-QIANG
%A ZHANG RONG
%A SHI YI
%A ZHENG YOU-DOU
%A <br>周玉刚
%A 沈波
%A 刘杰
%A 周慧梅
%A 俞慧强
%A 张荣
%A 施毅
%A 郑有炓
%J 物理学报
%D 2001
%I 
%X Polarization-induced charge density in modulation-doped AlxGa1-xN/GaN heterostructures is extracted through the simulation of the Schottky Capacitance-Voltage (C-V) characteristics. C-V measurements were made on Pt Schottky contacts on modulation-doped Al0.22Ga0.78N/GaN heterostructures. The C-V characteristics were simulated numerically using the three-dimensional Fermi model.Influence of sample parameters on C-V characteristics is analized by the simulation.Polarization-induced charge density,n-AlGaN doping level and Schottky barrier height have different influences on the C-V characteristics,and thus the polarization-induced charge density can be extracted accurately.The polarization-induced sheet charge density at the heterointerface is extracted to be 6.78×1012cm-2 in the Al0.22Ga0.78N/GaN heterostructure with the Al0.22Ga0.78 N thickness of 45nm.This work provides a method for quantitative analysis of the polarization-indeced charge in modulation-doped AlxGa1-xN/GaN heterostructures.
%K AlxGa1-xN/GaN heterostructure
%K polarization-induced charge
%K capacitance-voltage characteristics
%K numerical simulation<br>AlxGa1-xN/GaN异质结
%K 极化电荷
%K 电容电压特性
%K 数值模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=E0308277A28F2493&yid=14E7EF987E4155E6&vid=771152D1ADC1C0EB&iid=9CF7A0430CBB2DFD&sid=CC25DB91403D0902&eid=F7E64A4EB9091FB5&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=11