%0 Journal Article
%T Three new stable high-index silicon surfaces and their family territories<br>三个新的稳定硅表面及其家族领地
%A Li Wen-Jie
%A Jiang Jin-Long
%A Zhou Li
%A Zhao Nu-Guang
%A Yang Wei-Sheng
%A <br>李文杰
%A 姜金龙
%A 周立
%A 赵汝光
%A 杨威生
%J 物理学报
%D 2002
%I 
%X In order to make a thorough study on all possible stable silicon surfaces, we have studied, by means of low energy electron diffraction (LEED), 13 clean high index silicon surfaces scattered widely in the stereographic triangle: Si(10\ 4\ 13), (6\ 2\ 7), (8\ 4\ 11), (4\ 1\ 10), (2\ 1\ 5), (5\ 1\ 10), (5\ 2\ 10), (5\ 1\ 5), (5\ 1\ 6), (4\ 0\ 5), (12\ 4\ 19), (12\ 3\ 14), and (12\ 3\ 16). It turns out that all these surfaces are unstable, meaning that after being well annealed they will facet completely to facets of one or more stable surfaces. An effective method has been proposed so that complicated LEED patterns like those of these faceted surfaces can be identified with confidence. As a result, three new stable surfaces, that is, Si(20\ 4\ 23), (3\ 1\ 4), and (3\ 1\ 7) have been found, and their family territories along with that of Si(15\ 3\ 23) have been roughly determined.
%K high index surfaces
%K silicon
%K indium
%K faceting<br>高指数表面
%K 硅
%K 铟
%K 小面化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=AD1239EBFC86DC46&yid=C3ACC247184A22C1&vid=987EDA49D8A7A635&iid=708DD6B15D2464E8&sid=85C5BAEC82FA1149&eid=AF36F5BA5216EF95&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=20