%0 Journal Article
%T Electronic structure and optical properties of CdSe/HgSe/CdSe quantum dot quantum well<br>CdSe/HgSe/CdSe量子点量子阱(QDQW)晶粒的光学性质和电子结构
%A Xu Ling
%A Ma Yi
%A Li Ming-Hai
%A Huang Xin-Fan
%A Chen Kun-Ji
%A <br>徐岭
%A 马懿
%A 李明海
%A 黄信凡
%A 陈坤基
%J 物理学报
%D 2002
%I 
%X Core\|shell structured CdSe/HgSe/CdSe quantum dot quantum well (QDQW) nanocrystals were synthesized and well controlled by a colloidal chemical method. The results of optical absorption studies show that with appropriate HgSe well thickness (from 0.9 nm to 0), it is possible to tailor the 1s\|1s transition energy of QDQW nanocrystals from 1.8 to 2.1 eV. The enhancement and blue shift of photoluminescence peak was observed, which was attributed to the quantum confinement effect of carriers in HgSe well. The 1s\|1s transition energies of QDQW nanocrystals have been estimated by the effective mass approximation method. The results are compared with the experimentally determined 1s\|1s energies. It is shown that the general trend observed in the experiments is well reflected in the calculation.
%K quantum dot quantum well
%K tailoring of energy
%K enhancement of photoluminescence<br>量子点量子阱晶体
%K 能带剪裁
%K 加强的带边荧光峰
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=B52ED37D655D096B&yid=C3ACC247184A22C1&vid=987EDA49D8A7A635&iid=E158A972A605785F&sid=A766A50385B9FB1F&eid=E348995F86F60FD3&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=8