%0 Journal Article
%T SURFACE PASSIVATION OF LIGHT-EMITTING POROUS SILICON BY NITRIDE<br>发光多孔硅的表面氮钝化
%A LI GU-BO
%A ZHANG FU-LONG
%A CHEN HUA-JIE
%A FAN HONG-LEI
%A YU MING-REN
%A HOU XIAO-YUA
%A <br>李谷波
%A 张甫龙
%A 陈华杰
%A 范洪雷
%A 俞鸣人
%A 侯晓远
%J 物理学报
%D 1996
%I 
%X Porous silicon is treated in NH3 gas by rapid thermal annealing. FTIR spectra indicate that the surface of the sample is covered with Si(NH)2 and Si3N4 species. ESR signal shows that the sample has rather low density of dangling bonds. The photoluminescence intensity of the treated sample de-creases slightly compared to the sample without the treatment and is very stable while storing in at-mosphere. These results show that nitride can be an excellent passivation film on porous silicon and may be important to the practical applications.
%K 发光
%K 多孔硅
%K 表面
%K 氮钝化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7411BF4698E83734B7FABC2D7AC1A353&yid=8A15F8B0AA0E5323&vid=94E7F66E6C42FA23&iid=DF92D298D3FF1E6E&sid=880C4253794026AD&eid=5C10CB62DEB8898B&journal_id=1000-3290&journal_name=物理学报&referenced_num=9&reference_num=9