%0 Journal Article
%T PHOTOLUMINESCENCE OF ZnSe-ZnS STRAINED-LAYER SUPERLATTICES<br>ZnSe-ZnS应变超晶格的光致发光
%A JIANG FENG-YI
%A PAN CHUAN-KANG
%A FAN GUANG-HAI
%A FAN XI-WU
%A <br>江风益
%A 潘传康
%A 范广涵
%A 范希武
%J 物理学报
%D 1992
%I 
%X The photoluminescence (PL) emission spectra of ZnSe-ZnS strained-layer surerlattices (SLS) grown by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) have been studied in this paper. With the high density excitation (N2-Laser 337.1nm), the PL of the SLS consist in only one emission peak due to the n = 1 heavy hole excitons recombination, and with the low density excitation (high pressure Hg-Lamp 365.nm) the PL consist of both the band-edge emission and the deep-centre emission. One gap-edge emission peak without the deep-centre emission have been observed in the low-excitation PL, and the sample was thought to have good crystaline quality. The subbands of ZnSe-ZnS SLS were calculated using the theoies of the stress-induced baud structures and the Kronig-Penney band model. The two emission peaks, the energy of which are greater than the energy-gap of ZnSe single crystal films in the absence of strain, were observed in the PL spectra of ZnSe-ZnS SLS for the first time. According to the subband calculation, the two peaks were thought to be caused by the transitions between the n= 1 electronic subband and the n= 1 heavy, light holes' subbands, respectively.
%K 半导体
%K 超晶格
%K 光致发光
%K 单昌
%K 薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=1150A4EB01A57B37D13D2F867589E087&yid=F53A2717BDB04D52&vid=2001E0D53B7B80EC&iid=E158A972A605785F&sid=DB7B2C790D19BE6E&eid=421C41B8FD4D3EBA&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=6