%0 Journal Article
%T Effect of inner electric field on the photoluminescence spectrum of nanosilicon<br>内电场对纳米硅光致发光谱的影响
%A Huang Kai
%A Wang Si-Hui
%A Shi Yi
%A Qin Guo-Yi
%A Zhang Rong
%A Zheng You-Dou
%A <br>黄凯
%A 王思慧
%A 施毅
%A 秦国毅
%A 张荣
%A 郑有炓
%J 物理学报
%D 2004
%I 
%X Based on the quantum confinement_luminescence center model, t he relation between the inner electric field (IEF) and the photoluminescence(PL) character is calculated. Results show that the IEF between nanosilicon and lum inescence centers (LCs) can have a strong effect on the carrier recombination ra te and th e spectrum peak position swinging. In the range from 2 to 5 nm, the carrier reco mbination rate at the LCs is much bigger than the rates of recombination inside the nanosilicon. And dut to the presence of IEF between nanosilicon and LCs, the PL intensity at the LCs and inside nanosilicon will reduce remarkably.
%K inner electric field
%K nanosilicon
%K photoluminescence
%K quantum confinement_l uminescence center<br>内电场
%K 纳米硅
%K 光致发光
%K 量子限制发光中心
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=44D959BBD13DF17E&yid=D0E58B75BFD8E51C&vid=8E6AB9C3EBAAE921&iid=E158A972A605785F&sid=83BD01456E8187CE&eid=D92306F676C2377C&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=28