%0 Journal Article
%T ADMITTANCE SPECTROSCOPY AFFECTED BY SURFACE POTENTIAL IN QUANTUM WELL STRUCTURE<br>量子阱结构的表面势对导纳谱测试结果的影响
%A GAO QI
%A ZHANG SHEN-KUN
%A JIANG ZUI-MIN
%A LU FANG
%A <br>高琦
%A 张胜坤
%A 蒋最敏
%J 物理学报
%D 2000
%I 
%X The activated energy of single quantum well structures obtained by the admittance measurements is varied with different thickness of capping layer and with one sample under different applied bias voltages.The electric potential distribution is the key effect on the energy variation.The correctness of the measured results can be judged by using the admittance measurements under different applied bias voltages
%K 量子阱结构
%K 表面势
%K 导纳谱测试
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=47CCBE99C69FAD7DA0EF362E37B584CB&yid=9806D0D4EAA9BED3&vid=2A3781E88AB1776F&iid=B31275AF3241DB2D&sid=BE14F47B38DC36BB&eid=BAEC9CADFE1F0CCC&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=4