%0 Journal Article
%T XPS AND AES STUDY FOR Au/a-Si:H INTERFACE<br>Au/a-Si:H界面X射线光电子能谱和俄歇电子能谱研究
%A ZHONG ZHAN-TIAN
%A WANG DA-WEN
%A LIAO XIAN-BO
%A FAN YUE
%A LI CHENG-FANG
%A MOU SHAN-MING
%A <br>钟战天
%A 王大文
%A 廖显伯
%A 范越
%A 李承芳
%A 牟善明
%J 物理学报
%D 1991
%I 
%X The Au/a-Si:H contact has been investigated by XPS and AES. It is found that the metal cluster occurs, at initial formation process of Au/a-Si:H interface, and after exceeding the critical Au deposition value, the Vinterdiffusion and chemical reaction of Au and Si begin and Au-Si intermixing region is formed. Furthermore, the experimental results of photoemission study confirm that Si islands are formed after annealing the interface of Au/a-Si:H.
%K Au
%K a－Si：H
%K 界面
%K XPS
%K AES
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=433445AE96601F02EBC89D3EBBD9B152&yid=116CB34717B0B183&vid=1371F55DA51B6E64&iid=0B39A22176CE99FB&sid=7979125BBE749348&eid=5D8C08279A19B0D4&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=3