%0 Journal Article
%T Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope<br>微氮直拉硅单晶中氧化诱生层错透射电镜研究
%A Xu Jin
%A Yang De-Ren
%A Chu Ji
%A Ma Xiang-Yang
%A Que Duan-Lin
%A <br>徐　进
%A 杨德仁
%A 储　佳
%A 马向阳
%A 阙端麟
%J 物理学报
%D 2004
%I 
%X The extended-defects generated during oxidation in both of nitrogen-doped Czochralski (NCZ) silicon and common Czochralski (CZ) silicon have been investigated by Transmission Electron Microscopy(TEM). It is found that the size of the oxidation-induced stacking faults (OSFs) decreases with the increase of oxidation time in NCZ silicon, and punched-out dislocations could also be observed. While in CZ silicon, there are many polyhedral oxygen precipitates generated, and the size of OSFs increases with increasing oxidation time.
%K silicon
%K TEM
%K OSF<br>直拉硅，
%K 透射电镜，
%K 氧化诱生层错
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=B1A4733DDC842CD8&yid=D0E58B75BFD8E51C&vid=8E6AB9C3EBAAE921&iid=0B39A22176CE99FB&sid=64808317C39DF331&eid=D8414BC1307BF1A3&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=19