%0 Journal Article
%T The electric properties of GaAs Schottky diode contining InAs self-assembled quantum dots<br>InAs自组装量子点GaAs肖特基二级管的电学特性研究
%A Zhao Ji-Gang
%A Shao Bin
%A Wang Tai-Hong
%A <br>赵继刚
%A 邵彬
%A 王太宏
%J 物理学报
%D 2002
%I 
%X The properties of current transport in InAs/GaAs self-assembled quantum dots and the influence of schottky diode are investigated. Hystereses and steps contact with charging and discharging of electrons in the quantum dots. Hystereses are arising from the charged quantum dots that block electrons. All the steps are arising from that the electrons resonant tunnel out of the quantum dots. The electrons that come out of quantum dots affect the current transport.
%K hystereses
%K self-assembled quantum dots(SAQDs)
%K resonant tunneling<br>迟滞现象
%K 自组装量子点
%K 共振隧穿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=4CB336248F7922F7&yid=C3ACC247184A22C1&vid=987EDA49D8A7A635&iid=B31275AF3241DB2D&sid=B7AB8E33F0FC19ED&eid=D98C4F25072149E5&journal_id=1000-3290&journal_name=物理学报&referenced_num=2&reference_num=8