%0 Journal Article
%T Investigation of high-power sub-nanosecond GaAs photoconductive switches<br>高功率亚纳秒GaAs光电导开关的研究
%A Shi Wei
%A Zhao Wei
%A Zhang Xian-Bin
%A Li En-Ling
%A <br>施卫
%A 赵卫
%A 张显斌
%A 李恩玲
%J 物理学报
%D 2002
%I 
%X Experiments of an all solid state insulated lateral semi insulating GaAs photoconductive semiconductor switch(PCSS) triggered by nano second and pico second laser pulses are reported. Both linear and nonlinear modes of the 3 mm gap and 8 mm gap GaAs PCSS was observed when triggered by a nano second laser. The current could be as high as 560A. The same device also revealed good temporal characteristics when trigger with a pico second laser. The rising time of the PCSS response is less than 200ps, which is limited by the coaxial cable.
%K photoconductive semiconductor switches
%K lock
%K on effect
%K high power ultra
%K fast electrical pulse<br>光电导开关
%K lockon效应
%K 高功率超快电脉冲
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7FC8C90E4C5F38D9&yid=C3ACC247184A22C1&vid=987EDA49D8A7A635&iid=E158A972A605785F&sid=65A51D0EBEB846F5&eid=11632AEF1E1F2092&journal_id=1000-3290&journal_name=物理学报&referenced_num=9&reference_num=10