%0 Journal Article
%T STUDY OF VERTICALLY ALIGNING GROWTH OF SELF-ASSEMBLED InAs/GaAs QUANTUM DOTS<br>自组织InAs/GaAs量子点垂直排列生长研究
%A WANG ZHI-MING
%A FENG SONG-LIN
%A Lv ZHEN-DONG
%A YANG XIAO-PING
%A CHEN ZONG-GUI
%A SONG CHUN-YING
%A XU ZHONG-YING
%A ZHENG HOU-ZHI
%A WANG FENG-LIAN
%A HAN PAI-DE
%A DUAN XIAO-FENG
%A <br>王志明
%A 封松林
%A 吕振东
%A 杨小平
%A 陈宗圭
%A 宋春英
%A 徐仲英
%A 郑厚植
%A 王凤莲
%A 韩培德
%A 段晓峰
%J 物理学报
%D 1998
%I 
%X We have grown two-layer InAs structures spaced by 6.5nm GaAs. Self-assembled InAs quantum dots (QDs) occur in the first layer with 2.5ML InAs coverage due to S-K growth mode. The second layer changes from 2D to 3D growth when the thickness of InAs is 1.5ML, which is obviously smaller than the critical thickness (1.7ML) of single InAs layer structures. Transmission electron microscopy shows that two-layer QDs with different heights have been obtained according to the mechanism of a vertically correlated arrangement. But only one photoluminescence peak related with large QD ensemble has been observed as a result of strong electronic coupling in InAs QD pairs.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=27AD7F9604EF5D7904BF7B9FAE7C3491&yid=8CAA3A429E3EA654&vid=F4B561950EE1D31A&iid=CA4FD0336C81A37A&sid=CFAC5CB624A41AFD&eid=39EEF47180459690&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0