%0 Journal Article
%T CALCULATION OF ELECTRONIC STATES OF THE CdTe(110) RELAXED SURFACE<br>CdTe(110)弛豫表面电子态的计算
%A JIA YU
%A FAN XI-QING
%A MA BING-XIAN
%A <br>贾瑜
%A 范希庆
%A 马丙现
%J 物理学报
%D 1997
%I 
%X By using the method of phenomenological scattering thoery,we have calculated the electronic structure of the CdTe(110) relaxed surface.The results are in good agreement with the experiments and other calculations.By analyzing the results we have discussed the origin of relaxation of CdTe(110) surface.
%K 表面能带
%K 碲化镉
%K 弛豫表面
%K 电子态
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=59DCF672634DFB414E5B8E41B3B7AD46&yid=5370399DC954B911&vid=D997634CFE9B6321&iid=F3090AE9B60B7ED1&sid=B914830F5B1D1078&eid=37904DC365DD7266&journal_id=1000-3290&journal_name=物理学报&referenced_num=6&reference_num=8