%0 Journal Article
%T STUDIES ON TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN POROUS SILICON<br>多孔硅光致发光的温度效应研究
%A LIU XIAO-BING
%A XIONG ZU-HONG
%A YUAN SHUAI
%A CHEN YAN-DONG
%A HE JUN
%A LIAO LIANG-SHENG
%A DING XUN-MIN
%A HOU XIAO-YUAN
%A <br>刘小兵
%A 熊祖洪
%A 袁 帅
%A 陈彦东
%A 何 钧
%A 廖良生
%A 丁训民
%A 侯晓远
%J 物理学报
%D 1998
%I 
%X The temperature dependence of photoluminescence (PL) in porous silicon has been investigated. It is found that the PL peak from the low porosity samples shows a red shift with decreasing temperature, but the blue shift of the PL peak is always observed in the high porosity samples. The temperature dependence of the PL peak shift observed experimentally can be qualitatively explained by the simulated curves of the luminescent efficiency versus wavelength.
%K 峰位移动
%K 多孔硅
%K 光致发光
%K 温度效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=478BD5F0F36565A62A4A45ABD1713746&yid=8CAA3A429E3EA654&vid=F4B561950EE1D31A&iid=5D311CA918CA9A03&sid=A5545D8D349C0F70&eid=D3EC5D34434DACC5&journal_id=1000-3290&journal_name=物理学报&referenced_num=3&reference_num=7