%0 Journal Article
%T Deep centers investigations of P-HEMT functional materials of ultra-high-speed microstructures grown by MBE<br>分子束外延生长赝配高电子迁移率超高速微结构功能材料里深中心识别
%A JWang
%A Weikun Ge
%A <br>卢励吾
%A 张砚华
%A J.Wang
%A Weikun Ge
%J 物理学报
%D 2002
%I 
%X The deep centers of high electron mobility transistor (HEMT) and pseudomorphic-HEMT (P-HEMT) functional materials of ultra-high-speed microstructures grown by MBE are investigated using deep level transient spectroscopy (DLTS) technique.DLTS spectra demonstrate that midgap states,having larger concentrations and capture cross sections,are measured in n-AlGaAs layers of HEMT and P-HEMT structures.These states may correlate strongly with oxygen content of n-AlGaAs layer.At the same time,one can observe that the movement of DX center is related to silicon impurity that is induced by the strain in AlGaAs layer of the mismatched AlGaAs/InGaAs/GaAs system of P-HEMT structure.The experimental results also show that DLTS technique may be a tool of optimization design of the practical devices.
%K molecular beam epitaxy growth
%K P-HEMT and HEMT functional materials
%K deep centers<br>分子束外延生长
%K 高电子迁移率超高速微结构功能材料
%K 深中心
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=DABBC9A1FCD998E1&yid=C3ACC247184A22C1&vid=987EDA49D8A7A635&iid=0B39A22176CE99FB&sid=965F4E89CD0AFC30&eid=09D368C679EC819B&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=16