%0 Journal Article
%T Determination of bandgap in SiGe strained layers using a pn heterojunction C-V<br>pn结电容-电压法测量应变SiGe禁带宽度
%A Shu Bin
%A Dai Xian-Ying
%A Zhang He-Ming
%A <br>舒斌
%A 戴显英
%A 张鹤鸣
%J 物理学报
%D 2004
%I 
%X A pn heterojunction C-V technique used to determine the bandgap of SiGe strained layers is presented in this paper. The SiGe bandgap is analyzed and calculated by acguiring the built-in potential and discontinuities of valence and conduction bands, according to the C-V profile of the stained SiGe/Si pn heterojunction. This technique is much more convenient and the experimental results agree very well with the theoretical and published calculations, indicating that the method is correct. This method is suitable for not only the bandgap of the single SiGe/Si pn heterojunctions, but also that of the SiGe/Si devices with SiGe/Si pn heterojunctions.
%K SiGe/Si
%K pn heterojunction
%K C?-V
%K bandgap<br>SiGe/Si，异质pn结，C-V，禁带宽度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=824D9B2464D2DD8A&yid=D0E58B75BFD8E51C&vid=8E6AB9C3EBAAE921&iid=CA4FD0336C81A37A&sid=6CCE24D86D03D083&eid=9CA95D22FC1D537C&journal_id=1000-3290&journal_name=物理学报&referenced_num=5&reference_num=13