%0 Journal Article
%T XPS AND AES STUDY FOR Pd/W/Si(lll) BILAYER INTERFACE<br>Pd/W/Si(111)双层膜界面X射线光电子能谱与俄歇电子能谱研究
%A SHI YI-SHENG
%A ZHAO TE-XIU
%A LIU HONG-TU
%A WANG XIAO-PING
%A <br>施一生
%A 赵特秀
%A 刘洪图
%A 王晓平
%J 物理学报
%D 1992
%I 
%X The Pd/W/Si(lll) interface reaction has been investigated by XRD, XPS and AES. As the annealing temperature was low, no reaction among Pd, W and Si can be detected, but W started to diffuse into Pd and Si started to diffuse into. W. When the annealing temperature was raised, Pd and W were mixed and Pd diffused into Si substrate. When the annealing temperature was raised further, the interface reaction leads to a redistribution of the two metals with accumulation of the refractory metal at the outer layer, such a layer can be used as a diffusion barrier to protect the inner shallow contact layer.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=D02D35CF7DD1C3C9CFFFBAEB3DE150AE&yid=F53A2717BDB04D52&vid=2001E0D53B7B80EC&iid=708DD6B15D2464E8&sid=2F9DAF60B46325CC&eid=F0513F17AA41A8C6&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0