%0 Journal Article
%T LOW TEMPERATURE PHOTOLUMENESCENCE OF THE MODULATION DOPED HETEROSTRUCTURE GROWN BY MBE<br>分子束外延调制掺杂结构的低温光致荧光
%A HUANG YI
%A ZHOU JUN-MING
%A JIA WEI-YI
%A CHENG WEN-QIN
%A WANG YAN-YUN
%A <br>黄绮
%A 周均铭
%A 贾惟义
%A 程文芹
%A 王彦云
%J 物理学报
%D 1987
%I 
%X The results of photolumenescence measurements of modulation doped GaAs/N-AlGaAs 2DEG at 4.2 K are reported. They show that the photolumenescence method can be used as a diagnostic means for determing the quality of 2DEG materials. The features of the spectra have some correlation with electronic properties of 2DEG and provide some possibilities for improving MBE technology.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=0B9013C433B9F94DFEB8BB29D320C230&yid=9C2DB0A0D5ABE6F8&vid=933658645952ED9F&iid=0B39A22176CE99FB&sid=31611641D4BB139F&eid=73579BC9CFB2D787&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0