%0 Journal Article
%T ELECTRONIC SPECTROSCOPY STUDIES OF P2S5/NH4OH TREATED GaAs(100) SURFACE<br>P2S5/NH4OH处理GaAs(100)表面的电子能谱研究
%A ZHONG ZHAN-TIAN
%A LUO WEN-ZHE
%A MOU SHAN-MING
%A ZHANG KAI-YAN
%A LI XIA
%A LI CHENG-FANG
%A <br>钟战天
%A 罗文哲
%A 牟善明
%A 张开颜
%A 李侠
%A 李承芳
%J 物理学报
%D 1992
%I 
%X The microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy(XPS). AES reveals that only phosphorus and sulfur, but no oxygen, are contain-ed in the interface between passivation film and GaAs substrate. Using XPS, it is found that both Ga2O3 and As2O3 on the GaAs surface are removed by the P2S5/NH4OH treatment, moro-ver, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of surfacer state density and improving both electronic and optical properties of GaAs surface.
%K 砷化镓
%K 半导体
%K 钝化
%K 表面
%K 电子能谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=1150A4EB01A57B37167C3143721EC6D1&yid=F53A2717BDB04D52&vid=2001E0D53B7B80EC&iid=E158A972A605785F&sid=21A4BC96BDC43D33&eid=2A22E972FD97071B&journal_id=1000-3290&journal_name=物理学报&referenced_num=3&reference_num=0