%0 Journal Article
%T THE ORIENTED GROWTH OF C60 FILMS-ON GaAs(100) SUBSTRATE<br>GaAs(100)衬底上C60单晶膜的取向生长
%A YAO JIANG-HONG
%A ZOU YUN-JUAN
%A ZHANG XING-WANG
%A CHEN GUANG-HUA
%A <br>姚江宏
%A 邹云娟
%A 张兴旺
%A 陈光华
%J 物理学报
%D 1997
%I 
%X Entirely (111) oriented C60 single films are grown successfully on GaAs (100) substrate by a physical vapor deposition technique with double temperature zone.The structure and morphology of films are studied by X-ray diffraction and SEM.The results show that the highly oriented growth of C60 films occurs only at narrow range of substrate temperature,higher or lower substrate temperature leads to random orientation of grains.A reasonable explanation for experimental results is given and the growth mechanism of C60 epitaxial films is discussed.
%K 砷化镓
%K 碳60
%K 单晶生长
%K 膜生长
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=23BAA394FB154588E7DEE9F5788706B5&yid=5370399DC954B911&vid=D997634CFE9B6321&iid=38B194292C032A66&sid=283B38DAD0D068F3&eid=5CB576B96D187F64&journal_id=1000-3290&journal_name=物理学报&referenced_num=3&reference_num=3