%0 Journal Article
%T STUDY ON THE QUANTUM CONFINED STARK EFFECT OF InGaAs/InAlAs MULTIPLE QUANTUM WELL STRUCTURES<br>InGaAs/InAlAs多量子阱结构的量子限制Stark效应研究
%A YU QIAN
%A WANG JIAN-HUA
%A LI DE-JIE
%A WANG YU-TIAN
%A ZHUANG YAN
%A JIANG WEI
%A HUANG YI
%A ZHOU JUN-MING
%A <br>俞谦
%A 王健华
%A 李德杰
%A 王玉田
%A 庄岩
%A 姜炜
%A 黄绮
%A 周钧铭
%J 物理学报
%D 1996
%I 
%X The quantum confined stark effect of InGaAs/InAlAs MQW heterostructures lattice-matched to InP substrate, grown by Chinese-built molecular beam epitaxy (MBE) system, is observed by absorption photocurrent spectra measurements, as well as the anisotropic elec-troabsorption of MQWs. The structure parameters of the epitaxied materials, which can be used to fabricate waveguide MQW electroabsorption modulators, were determined from double crystal X-ray diffraction measurements and computer simulations. The theoretical calculations of absorption-edge red shift compared with experimental results shows that the built-in-potential of the p-i-n junction can not be neglected.
%K INGaAs
%K 多量子阱
%K 量子尺寸效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7411BF4698E8373490D3676A6E76EC4A&yid=8A15F8B0AA0E5323&vid=94E7F66E6C42FA23&iid=0B39A22176CE99FB&sid=6826CBE9C80ACB20&eid=4133DDB79B497495&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=2