%0 Journal Article
%T Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE<br>高能电子衍射研究H钝化偏角Si衬底上Si,GexSi1-x的分子束外延生长模式
%A GUI QIAN
%A HUANG QI
%A CHEN HONG
%A ZHOU JUN-MING
%A <br>崔堑
%A 黄绮
%A 陈弘
%A 周均铭
%J 物理学报
%D 1996
%I 
%X A study of Si, GexSi1-x growth mode on H-terminated vicinal Si substrate by RHEED is presented. About 10 nm Si epilayer is required to obtain a smooth Si substrate. Bi-atomic terrace dominate on the stable surface both of Si and GexSi1-x single atomic terrace is present in the mean time. Dimer row on bi-atomic Si terrace is perpendicular to terrace edge while dimer row on GexSi1-x bi-atomic terrace is paraller to it (90°rotation). GexSi1-x bi-atomic terrace edge is more straight than Si one.
%K 分子束外延
%K 硅
%K 锗
%K 高能电子衍射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7411BF4698E837344DEEFD2EAA95C41F&yid=8A15F8B0AA0E5323&vid=94E7F66E6C42FA23&iid=E158A972A605785F&sid=AEE2F90BC0DB5F35&eid=BBA8B1249CDAA6CE&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=1