%0 Journal Article
%T A NEW METHOD FOR POST TREATMENT OF POROUS SILICON:SULFUR PASSIVATION BY MICROWAVE PLASMA ASSISTANCE<br>多孔硅的一种新的后处理方法──微波等离子体辅助钝化处理
%A LIU XIAO-BING
%A XIONG ZU-HONG
%A YUAN SHUAI
%A LIAO LIANG-SHENG
%A HE JUN
%A CAO XIAN-AN
%A MIAO XI-YUE
%A DING XUN-MIN
%A HOU XIAO-YUAN
%A <br>刘小兵
%A 熊祖洪
%A 袁帅
%A 廖良生
%A 何钧
%A 曹先安
%A 缪熙月
%A 丁训民
%A 侯晓远
%J 物理学报
%D 1997
%I 
%X A new method for post-treatment of PS(porous silicon), sulfur passivation by microwave plasma assistance in vacuum,is reported in this paper.Fourier transform infrared spectrum indicated that the treated sample surface is mainly covered by SiSx and SiOy.Compared with the as etched PS,the photoluminescence (PL) intensity of the sample is 3.5 times stronger,and the 4nm blueshift of the PL peak was observed experimentally;furthermore,the intensity decay of the PL peak hasnot been observed after 60d in the atmosphere.Therefore,sulfur passivation is an effective post treatment for enhancing PL intensity and stabilization of PS.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=A3AA142BCD55830B81E00BA049AF2438&yid=5370399DC954B911&vid=D997634CFE9B6321&iid=F3090AE9B60B7ED1&sid=096CE45B73E115B7&eid=358F2B73B31EF50A&journal_id=1000-3290&journal_name=物理学报&referenced_num=3&reference_num=0