%0 Journal Article
%T BEHAVIOUR OF X-RAY DIFFRACTION FROM UNIFORMLY BENT Si CRYSTAL<br>均匀弯曲硅单晶X射线衍射行为
%A YANG PING
%A <br>杨平
%J 物理学报
%D 1992
%I 
%X X-ray diffraction from uniformly bent Si crystal has been studied. The experimental integrated diffraction intensity rises monotonically with the strain in the crystal, this coincides with the theory. The visibility of Pendell?sung fringes becomes poorer as the strain goes up, this reflects the increse of intensity difference between the wave fields and variation of the trace of the wave fields in the crystal.
%K 硅
%K 单晶
%K 弯曲
%K X射线衍射
%K 波场
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=DFEBCB4AA9D58021FEBD2181402F1A0A&yid=F53A2717BDB04D52&vid=2001E0D53B7B80EC&iid=0B39A22176CE99FB&sid=866F8A6B640835A7&eid=273ADA1BCEFE8C00&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=4