%0 Journal Article
%T ELECTRON TUNNELING AND NEGATIVE DIFFERENTIAL RESISTANCE OF MIM LIGHT-EMISSION TUNNEL JUNCTION<br>金属-绝缘体-金属隧道发光结的电子隧穿和负阻现象
%A YU JIAN-HUA
%A SUN CHENG-XIU
%A WANG MAO-XIANG
%A ZHANG YOU-WEN
%A WEI TONG-LI
%A <br>俞建华
%A 孙承休
%A 王茂祥
%A 张佑文
%A 魏同立
%J 物理学报
%D 1998
%I 
%X We have observed that the apparent negative differential resistance(NDR) comes out in I-V characteristic curves of metal-insulator-metal(MIM) thin film tunnel junction when light-emission from this structure occurs in the experiments.The mechanism of this NDR is that the surface plasmon polariton(SPP),which plays a role of intermediate in the process of light-emission,creates the impeding effect upon tunneling electrons.We have also built the circuit simulation of electron-transfer, computed the numerical solution of I-V characteristic curve,and revealed the key action of SPP on the NDR in I-V characteristic curve and the light-emission from MIM tunnel junction.
%K 薄膜
%K MIMTJ
%K 电子隧穿
%K 隧道结
%K 发光结
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=CE7EBDE17DD089B7B4EACFFCA07F130B&yid=8CAA3A429E3EA654&vid=F4B561950EE1D31A&iid=0B39A22176CE99FB&sid=B1E36BF7B9783A85&eid=31BCE06A2FD82A16&journal_id=1000-3290&journal_name=物理学报&referenced_num=4&reference_num=4