%0 Journal Article
%T GROWTH DYNAMICS OF NANO-CRYSTALLINE SILICON (nc-Si:H)FILMS AND ITS COMPUTER SIMULATION<br>纳米硅薄膜的生长动力学与计算机模拟
%A LIN HONG-YI
%A WU XU-HUI
%A HE YU-LIANG
%A CHU YI-MING
%A <br>林鸿溢
%A 武旭辉
%A 何宇亮
%A 褚一鸣
%J 物理学报
%D 1996
%I 
%X The hydrogenated nano-crystalline silicon (nc-Si:H) films have attracted more attention for peoples, because of their novel structure and peculiar properties. The nc-Si: H films are prepared by the high purity hydrogen diluted methane as the reactive gases and actived at r. f. and d. c. double power sources, in a conventional plasma enhanced chemical vapor deposition (PECVD) system. The film samples have been studied by means of high-resolution electron microscopy, Raman scattering spectroscopy, scanning tunneling microscopy and other means. Based on the analysis of fabricated processes of the nc-Si: H films, a fractal growth model which called diffusion and reaction limited aggregation (DRLA) model was proposed. It is shown that results of computer simulation agree with the experimental results.
%K 纳米
%K 硅
%K 薄膜
%K 生长动力学
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7411BF4698E837345B134EF440D4E2D2&yid=8A15F8B0AA0E5323&vid=94E7F66E6C42FA23&iid=E158A972A605785F&sid=04FC77FB58A9B53A&eid=36C49E1242CC2C7A&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=10