%0 Journal Article
%T CURRENT TRANSPORT MECHENISM IN THERMAL-LYNITRIDED SiO2 THIN FILMS<br>薄热氮氧化硅介质膜中的电流传导机构
%A CHANG XUE-REN
%A LIU BAI-YONG
%A CHEN DOU-NAN
%A <br>郑学仁
%A 刘百勇
%A 陈斗南
%J 物理学报
%D 1989
%I 
%X A new trap-assisted two-step tunneling model is proposed to explain the conduction enhancement characteristics and conduction mechanism in heavily-nitrided oxide films. A theoretical calculation is carried out to fit the theory to the experimental results. The trap density and trap energy level are found to be in the range of 1.2×1019-7.2×1020cm-3 and 2.46-2.56 eV respectively. These results agree satisfactorily with the Auger spectroscopic data. Furthermore, this model can also be applied MNOS structure or MIS devices with other traps.
%K 热
%K 氮氧化硅
%K 介质膜
%K 电流
%K 传导
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=9980150F11AD8C7C5C7A6359E63621A3&yid=1833A6AA51F779C1&vid=16D8618C6164A3ED&iid=38B194292C032A66&sid=09D368C679EC819B&eid=05340B75C67FF664&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=1