%0 Journal Article
%T EFFECTS OF BONDED HYDROGEN ON THE PHOTOLUMINESCENCE PROPERTIES OF GD a-Si:H THIN FILMS<br>键合氢对GDa—Si:H薄膜光致发光性质的影响
%A MA HONG-LEI
%A ZHOU YU-FANG
%A LI DUN-YIN
%A <br>马洪磊
%A 周玉芳
%A 李敦银
%J 物理学报
%D 1986
%I 
%X The photoluminescence spectra and optical absorption spectra were measured for GD a-Si :H films prepared at different substrate temperatures. It is found that increasing bonded hydrogen centent results in a systematic increase of the photoluminescence peak intensity, peak energy, linewidth, Stokes shift, and thermal quenching. From the experimental results we infer that: (1) The bonded hydrogen may generate radiative recombination centers as well as may remove non-radiative recombination centers; (2) The increase of the bonded hydrogen centent results in increase of the elec-tron-phonon interaction and a slight reduction in the band tail width.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=D861342961D276090BEDCC317A1B8004&yid=4E65715CCF57055A&vid=6209D9E8050195F5&iid=B31275AF3241DB2D&sid=00B9006659EBD8AC&eid=245EE63BFE8F8B66&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0