%0 Journal Article
%T A COMPLEX MODEL FOR THE HYDROGENATED VACANCY IN CRYSTALLINE SILICON<br>晶态硅中氢化单空位的络合物模型
%A DAI GUO-CAI
%A GUAN DA-REN
%A DENG CONG-HAO
%A <br>戴国才
%A 关大任
%A 邓从豪
%J 物理学报
%D 1986
%I 
%X The electronic energies of hydrogenated silicon vacancy which has Td symmetry are calculated. Using the method of completely neglecting of differential overlap (CNDO), we find the probability of the formation of the hydride quartet, and the effect of interaction between four SiH units in the model. We conclude that the hydride quartet complex is a more plausible model for the hydrogenated vacancy in crystalline silicon than that with four SiH bonds unrelated one another.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=140007B63C2A0F4AB548F5DCFB204AE1&yid=4E65715CCF57055A&vid=6209D9E8050195F5&iid=B31275AF3241DB2D&sid=6452E1221020E61F&eid=EB8E83807F36F05B&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0