%0 Journal Article
%T TOTAL CURRENT SPECTRA STUDIES ON ELECTRONIC STATES OF Si(100) SURFACE<br>Si(100)表面电子态的总电流谱研究
%A WANG XIANG-DONG
%A HU JI-HUANG
%A GE YU-QING
%A DAI DAO-XUAN
%A <br>王向东
%A 胡际璜
%A 葛毓青
%A 戴道宣
%J 物理学报
%D 1992
%I 
%X Electronic states of Si(100)2×1 clean surface and Si(100)1×1-2H surface are studied with total current spectrometer. The occupied surface states are at 0.25, 8.4 and near 12 eV below thevalence band maximum, while the unoccupied surface states are at 0.7 eV above the valence band maximum. Two induced surface states of Si(100)1×1-2H are observed below the valence band maximum.
%K 硅
%K 表面
%K 电子态
%K 总电流谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=1CDADA02121A4E420BDCD4F55AC7CA5E&yid=F53A2717BDB04D52&vid=2001E0D53B7B80EC&iid=B31275AF3241DB2D&sid=E1034A3BCFB43055&eid=EAA944F99AA73B33&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=5