%0 Journal Article
%T VALENCE-BAND OFFSETS AT St/Ge STRAINED HETEROINTERFACES UNDER DIFFERENT STRAIN CONDITIONS<br>不同晶面与应变状态下Si/Ge应变异质界面的价带能量不连续性
%A KE SAN-HUANG
%A HUANG MEI-CHUN
%A WANG REN-ZHI
%A <br>柯三黄
%A 黄美纯
%A 王仁智
%J 物理学报
%D 1996
%I 
%X This paper presents a theoretical determination of valence-band offsets (VBO' s) on (001 ) and (110) interfaces for St/Ge system under different strain conditions, by making use of an average bond energy theory in conjunction with a deformation potential method. The quantitative relationship between the VBO's and the strain condition (characterized by the composition x in substrate Si1-xGex ) is demonstrated. It is shown that the discontinuity be tween the two average valence-band energies is affected little by the strain condition, while,the discontinuity between the two tops of valence-band has a sensitive dependance on the strain condition, and this effect is mainly due to the alteration of the valence-band structure induced by the uniaxial stress. It is found that the VBO value on (110) interface is somewhat smaller than those on (001 ) interface. i. e., there is a weak relevance to the lattice orienta tion. Present results of VBO's are 0. 74 eV for Ge on St(001 ) and 0. 22 eV for St on Ge(001 ), in very good agreement with experimental data:(0. 74 + 0. 13) eV and (0. 17 + 0. 13)eV, respectively.
%K 半导体超晶格
%K 硅／锗
%K 应变异质界面
%K 价带能量
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7411BF4698E83734DBF28682EF7AFDC9&yid=8A15F8B0AA0E5323&vid=94E7F66E6C42FA23&iid=CA4FD0336C81A37A&sid=D767283A3B658885&eid=4BB057F167CF3A60&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=1