%0 Journal Article
%T INFLUENCE OF ARGON ADDITION ON THE GROWTH OF DIAMOND-LIKE FILM<br>氩气掺入对类金刚石沉积过程的影响
%A GAO KE-LIN
%A ZHAN RU-JUAN
%A HUANG WEI-DONG
%A ZOU ZU-PING
%A WANG YAN-XIA
%A XIANG ZHI-LIN
%A <br>高克林
%A 詹如娟
%A 黄卫东
%A 邹祖平
%A 王燕霞
%A 项志遴
%J 物理学报
%D 1992
%I 
%X In deposition of the diamond-like films by electron assisted plasma chemical vapor deposition, two systems (CH4/H2 and CH4/H2/Ar) have been used and compared. The electron temperature and electron density have been measured by means of Langmuir single probe. The results show that the electron density in CH4/H2/Ar is higher than that in CH4/H2, and the growth rate of the films increases in CH4/H2/Ar system.
%K 金刚石
%K 薄膜
%K EACVD
%K 氩
%K 等离子体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=B11ACA574C70C9BE969AF264DDF9A2E3&yid=F53A2717BDB04D52&vid=2001E0D53B7B80EC&iid=38B194292C032A66&sid=BC88D6B0750E09D1&eid=47F7649551A37CFC&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=2