%0 Journal Article
%T CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES<br>用Pendell?sung条纹研究硅单晶中微缺陷
%A LI MING
%A MAI ZHEN-HONG
%A CUI SHU-PAN
%A <br>李明
%A 麦振洪
%A 崔树范
%J 物理学报
%D 1994
%I 
%X Based on the statistical theory of X-ray dynamical diffraction, a method to obtain the static Debye-Waller facter from section topographs is described. By analyzing the intensity distribution of the Pendelldsung fringes in the X-ray diffraction topograghs for heat treated CZ and MCZ silicon single crystals, the number density and the size of the oxygen precipitates which are smaller than X-ray topographic resolution are estimated. This quantitative analysis method provides a new means of studying the micro-defects.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=B617AAEC4B94E52AE1C12D3D722D81AB&yid=3EBE383EEA0A6494&vid=BE33CC7147FEFCA4&iid=CA4FD0336C81A37A&sid=46CB27789995047D&eid=06EA2770E96C5402&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0