%0 Journal Article
%T ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES<br>n+-Si与p-Si衬底上含纳米硅的SiO2膜电致发光
%A ZHANG YA-XIONG
%A LI AN-PING
%A CHEN KAI-MAO
%A ZHANG BO-RUI
%A SUN YUN-XI
%A QIN GUO-GANG
%A MA ZHEN-CHANG
%A ZONG WAN-HUA
%A <br>张亚雄
%A 李安平
%A 陈开茅
%A 张伯蕊
%A 孙允希
%A 秦国刚
%A 马振昌
%A 宗婉华
%J 物理学报
%D 1997
%I 
%X The structures of Au/Si-rich SiO2/p-Si and Au/Si-rich SiO2/n+-Si have been fabricated and their electroluminescence characteristics have comparatively been studied. For the Au/Si-rich SiO2/p-Si structure, when the forward bias is more than 4V, red light is emitted, while under the reverse bias, no light is observed. For Au/Si-rich SiO2/n+-Si structure, it does not emit light under the forward bias, but it emits red light when the reverse bias is greater than 3.5V. The mechanism for electroluminescence from the Au/Si-rich SiO2/n+-Si structure is disscussed.
%K 多孔硅
%K 纳米硅
%K 光致发光
%K 二氧化硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=23BAA394FB1545880B492FBB89AE78CA&yid=5370399DC954B911&vid=D997634CFE9B6321&iid=94C357A881DFC066&sid=BCE65990EF9348F5&eid=512771C17A2FFC1B&journal_id=1000-3290&journal_name=物理学报&referenced_num=3&reference_num=5