%0 Journal Article
%T THE EFFECT OF PARALLEL CONDUCTANCE IN AlGaAs/GaAs HETEROJUNCTION<br>AlGaAs/GaAs异质结中的平行电导效应
%A SHI CHANG-XIN
%A XIN SHANG-HENS
%A WU DING-FEN
%A <br>史常忻
%A 忻尚衡
%A 吴鼎芬
%J 物理学报
%D 1987
%I 
%X The relationship between the gate voltage and charges in the parallel conducting layer has been calculated for AlGaAs/GaAs heterojunction, which is at large gate voltage and has the effect of parallel conductance. Then, the transconductance characteristics of the high electron mobility transistor (HEMT) is obtained. The comparison of theory and experiments are also made, and we find that they are in good agreement.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=1D9D7401EBE6B23B057D64222B3957EA&yid=9C2DB0A0D5ABE6F8&vid=933658645952ED9F&iid=38B194292C032A66&sid=8C27CCA578E52082&eid=4C2B9916B58305BE&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0