%0 Journal Article
%T THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs1-xPx<br>GaP和GaAs1-xPx中N束缚激子压力行为的理论计算
%A ZHANG YONG
%A ZHENG JIAN-SHENG
%A WU BO-XI
%A <br>张勇
%A 郑健生
%A 吴伯僖
%J 物理学报
%D 1991
%I 
%X Using a Koster-Slater one band-one-side approximation, the relationship between the pressure behavior of nitrogen bound excitons and the band structure is investigated in GaP and GaAs1-xPx. An analytical expression is found to be a good approximation for the pressure coefficient of the deep impurity state. The pressure coefficients of N and NNi bound exciton states are calculated in GaP and GaAs0.17P0.83. A tentative new assignment which agrees with experiments in both ordering of levels and pressure coefficients is given for nitrogen pair configurations.
%K GaP
%K GaAs1－xPx
%K 束缚激子
%K 压力
%K 激子
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=433445AE96601F025591CBE3770F9F0F&yid=116CB34717B0B183&vid=1371F55DA51B6E64&iid=5D311CA918CA9A03&sid=1EB017852C08068A&eid=298DD318DE734E4F&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=7