%0 Journal Article
%T THE PHOTOLUMINESCENCE SPECTRA SHIFT OF POROUS SILICON BY SPONTANEOUS OXIDATION<br>自然氧化引起的多孔硅光致发光光谱移动问题
%A WU XIAO-WEI
%A BAO XI-MAO
%A ZHENG XIANG-QIN
%A YAN FENG
%A <br>吴晓薇
%A 鲍希茂
%A 郑祥钦
%A 阎锋
%J 物理学报
%D 1994
%I 
%X The light-emission of the porous silicon is an indirect recombination process of the excited electron through the surface states. During spontaneous oxidation new surface states are formed which make the photoluminescence spectra shift.
%K 多孔硅
%K 光致发光
%K 光谱移动
%K 氧化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=1DADF53D171BDFF77A0057393C9AE382&yid=3EBE383EEA0A6494&vid=BE33CC7147FEFCA4&iid=DF92D298D3FF1E6E&sid=9E33BE6F309BC209&eid=86CBF6E43FA9E551&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=6