%0 Journal Article
%T AN ELECTRON SPECTROSCOPY STUDY OF THE In/GaAs (111) INTERFACE FORMATION PROCESS<br>In/GaAs(111)界面形成过程的电子能谱研究
%A DING XUN-MIN
%A DONG GUO-SHENG
%A YANG SHU
%A CHEN PING
%A WANG XUN
%A <br>丁训民
%A 董国胜
%A 杨曙
%A 陈平
%A 王迅
%J 物理学报
%D 1985
%I 
%X The interface formation process for In deposited on noncleaved GaAs (111) plane has been studied by means of photoemission speetroscopy combined with LEED pattern analysis. It is shown that the growth of three-dimensional In clusters dominates in this process. The surface Fermi level is found at 0.75±0.05 eV above VBM for all the investigated n-type samples prior to the deposition of In: these include both Ga-terminated GaAs(lll)-A and Asterminated GaAs (lll)-B faces. The Fermi level rapidly shifts to 0.90±0.05 eV above VBM during the deposition of In.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=EF51FC7FAFEC953EBD8BDDC670807E38&yid=74E41645C164CD61&vid=339D79302DF62549&iid=94C357A881DFC066&sid=20ED669EB429E15C&eid=46C2A519EDDA03DD&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0