%0 Journal Article
%T TIGHT-BINDING CALCULATION FOR GaAs (110) SURFACE<br>GaAs(110)面的紧束缚计算
%A XU YONG-NIAN
%A <br>徐永年
%J 物理学报
%D 1981
%I 
%X In the present work, the tight-binding calculation for the rotational relaxed GaAs (110) surface is studied. In order to simulate the semi-infinite crystal, a saturating slab model is adopted with the last layer of which being saturated by some quasi As and Ga atoms, so that the slab model can be considered as having one surface only. The LDOS thus obtained agrees well with that given by the conventional slab model.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=34A99ADB490F1A771D86280B50D54366&yid=AA64127AB7DEB65D&vid=340AC2BF8E7AB4FD&iid=F3090AE9B60B7ED1&sid=14475B1A66930D94&eid=B754280783395EEA&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0