%0 Journal Article
%T THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION<br>升华外延碳化硅p-n结的性质
%A FENG XI-QI
%A LUO BIN-ZHANG
%A <br>冯锡淇
%A 骆宾章
%J 物理学报
%D 1980
%I 
%X Measurements of the voltage-current characteristics and space-charge capacitance have been made on the epitaxial p-n junctions grown by method of silicon carbidt crystals sublimation. An analysis of the forward voltage-current and voltage-capacitance charateristics shows that the structures of the p-n junction may vary over a quite wide range, from typical p-i-n junctions to nearly linear graded junctions resulted from different epitaxial growth parameters, but most of them have intermidiate structures. The effect of epitaxial growth parameters on structures of p-n junctions is briefly discussed.In addition, The brightness-current characteristics, the spectral distribution of electroluminescence of forward biased epitaxial p-n junctions, and their performance under pulse and a.c. excitions are also described.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=5DE2FC5CE0FE85D78DD672E48F75051F&yid=E56875464B1C0EC1&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&sid=CA4FD0336C81A37A&eid=F3090AE9B60B7ED1&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0