%0 Journal Article
%T AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICS<br>利用肖特基势垒特性研究4mm波段硅雪崩二极管的杂质分布
%A LIN HONG-YI
%A <br>林鸿溢
%J 物理学报
%D 1978
%I 
%X In this paper, the impurity profile of the 4 mm band silicon avalanche diode is studied by means of the characteristics of the Schottky barrier. The characteristics of the impurity profile of the epitaxial layers, the impurity profile of the device and its effects on device performance are measured and discussed.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F29E19A6709D0EB5&yid=EA437CDB73D9759D&vid=DB817633AA4F79B9&iid=38B194292C032A66&sid=6490F0E20C4B41AD&eid=119B6C0AA09DE6B9&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0