%0 Journal Article
%T ELECTRON STATES OF A NORMAL-SUPERCONDUCTING MULTI-FILM STRUCTURE<br>正常导体-超导体(n-s)多层薄膜系统的电子态
%A XING DING-YU
%A GONG CHANG-DE
%A <br>邢定钰
%A 龚昌德
%J 物理学报
%D 1982
%I 
%X This work is a continuation of the ref. 1, 2] and 3]. The method developed in the previous works is extended to the study of a semi-infinite n-s multi-film structure. This structure is constructed as follows. First, we obtain a crystal thin film which may be either normal or superconducting by cutting a perfect infinite crystal at two separate paralled atomic planes. And then a mixed unit O composed of a thin film A and a thin film B is formed by close metallic contact. Finally, a semi-infinite multi-film structure is constructed by placing unit O's consecutively along the direction perpendicular to the interface. The corresponding single particle Green's functions for each step have been calculated. When film A and B belong to different normal metal, the results of the numerical calculation for both the single particle density of state and the energy band of such a structure have been given. When films A and B are made of the same normal metal, the results are equivelent to that of ref 7]. Futher-more, the equations for the case that one of the thin films is superconducting have been derived. The numerical results show that 1) the whole n-s multi-film structure is superconducting, and a finite peak appears in single particle density of states near the original gap edge, 2) the whole structure is gapless just as expect.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=8962AB5E4F2121E85DA70FF54652D172&yid=3F3D540C9B7906DE&vid=4AD960B5AD2D111A&iid=94C357A881DFC066&sid=06F643376BC2509E&eid=9107B2E171152411&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0