%0 Journal Article
%T ON THE THIRD ORDER OPTICAL NONLINEARITY OF SEMICONDUCTORS NEAR ITS ABSORPTION EDGE<br>关于半导体吸收边附近的三阶非线性光学常数
%A GAN ZI-ZHAO
%A YANG GUO-ZHEN
%A <br>甘子钊
%A 杨国桢
%J 物理学报
%D 1982
%I 
%X A theory is proposed about the third order optical nonlinearity which is induced by the saturation effect of interband transitions in semiconductors near the absorption edge. The value of the exceptionally large nonlinear refractive index of InSb is given.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=95217E8B803C026BA6762F141ED16141&yid=3F3D540C9B7906DE&vid=4AD960B5AD2D111A&iid=0B39A22176CE99FB&sid=FE4C96E058BB2280&eid=0C191C6ECF79047F&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0