%0 Journal Article
%T NTC and electrical properties of nickel and gold doped n-type silicon material<br>镍、金掺杂n型硅材料的NTC和电学特性
%A Dong Maojin
%A Chen Zhaoyang
%A Fan Yanwei
%A Wang Junhu
%A Tao Mingde
%A Cong Xiuyun
%A <br>董茂进
%A 陈朝阳
%A 范艳伟
%A 王军华
%A 陶明德
%A 丛秀云
%J 半导体学报
%D 2009
%I 
%X Silicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient (NTC) characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol s
%K deep level impurities
%K nickel
%K gold
%K NTC
%K electrical properties<br>深能级杂质
%K 镍
%K 金
%K NTC
%K 电学特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=337ED1A5A7A657C6D8B66529D597E86F&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=5D311CA918CA9A03&sid=58B51F366D885D79&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14