%0 Journal Article
%T Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs<br>UV/Ozone 表面处理对AlGaN/GaN HEMTs 性能的影响
%A Yuan Tingting
%A Liu Xinyu
%A Zheng Yingkui
%A Li Chengzhan
%A Wei Ke
%A Liu Guoguo
%A <br>袁婷婷
%A 刘新宇
%A 郑英奎
%A 李诚瞻
%A 魏珂
%A 刘果果
%J 半导体学报
%D 2009
%I 
%X Surface treatment plays an important role in the process of making high performance AlGaN/GaN HEMTs. A clean surface is critical for enhancing device performance and long-term reliability. By experimenting with different surface treatment methods, we find that using UV/ozone treatment significantly influences the electrical properties of Ohmic contacts and Schottky contacts. According to these experimental phenomena and X-ray photoelectron spectroscopy surface analysis results, the effect of the UV/ozone treatment and the reason that it influences the Ohmic/Schottky contact characteristics of AlGaN/GaN HEMTs is investigated.
%K AlGaN/GaN HEMT
%K surface treatment
%K UV/ozone treatment
%K Ohmic/Schottky contact<br>AlGaN/GaN
%K HEMT
%K 表面处理
%K UV/Ozone
%K 欧姆/肖特基接触
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0F2C9940F9195619CD9E9A26EBB8F64E&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=59906B3B2830C2C5&sid=BAC997954A6BDBB8&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0