%0 Journal Article
%T A symbolically defined InP double heterojunction bipolar transistor large-signal model<br>SDD定义的InP DHBT大信号模型
%A Cao Yuxiong
%A Jin Zhi
%A Ge Ji
%A Su Yongbo
%A Liu Xinyu
%A <br>曹玉雄
%A 金智
%A 葛霁
%A 苏永波
%A 刘新宇
%J 半导体学报
%D 2009
%I 
%X A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.
%K InP DHBT
%K large-signal model
%K SDD<br>InP
%K DHBT
%K 大信号模型
%K SDD
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B6909BCDA6702BA4DAC3FF79562B37A5&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=59906B3B2830C2C5&sid=96A6D7C3E2F5FB3A&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0