%0 Journal Article
%T Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD<br>金属有机物化学气相淀积法生长的Si掺杂GaN薄膜的应力，结构与电学特性研究
%A Xu Zhihao
%A Zhang Jincheng
%A Duan Huantao
%A Zhang Zhongfen
%A Zhu Qingwei
%A Xu Hao
%A Hao Yue
%A <br>许志豪
%A 张进成
%A 段焕涛
%A 张忠芬
%A 朱庆玮
%A 徐浩
%A 郝跃
%J 半导体学报
%D 2009
%I 
%X The stresses, structural and electrical properties of n-type Si-doped GaN films grown by metalorganic chemical vapor deposition (MOCVD) are systemically studied. It is suggested that the main stress relaxation is induced by bending dislocations in low doping samples. But for higher doping samples, as the Si doping concentration increases, the in-plane stresses in the grown films are quickly relaxed due to the rapid increase of the edge dislocation densities. Hall effect measurements reveal that the carrier mobility first increases rapidly and then decreases with increasing Si doping concentration. This phenomenon is attributed to the interaction between various scattering process. It is suggested that the dominant scattering process is defect scattering for low doping samples and ionized impurity scattering for high doping samples.
%K Si-doped GaN
%K stress relaxation
%K defect
%K electrical properties<br>硅掺杂GaN
%K 应力弛豫，缺陷，电学特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F64FEF4ADF377AFEE05B4FAAECA2DA64&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=59906B3B2830C2C5&sid=C6C99AF60C3BEE8E&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0