%0 Journal Article
%T GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off<br>利用金属键合和激光剥离技术制备GaN/metal /Si异质结构的研究
%A Zhang Xiaoying
%A Ruan Yujiao
%A Chen Songyan
%A Li Cheng
%A <br>张小英
%A 阮育娇
%A 陈松岩
%A 李成
%J 半导体学报
%D 2009
%I 
%X A process methodology has been adopted to transfer GaN thin films grown on sapphire substrates to Si substrates using metal bonding and laser lift-off techniques.After bonding,a single KrF (248 nm) excimer laser pulse was directed through the transparent sapphire substrates followed by low-temperature heat treatment to remove the substrates.The influence of bonding temperature and energy density of the excimer laser on the structure and optical properties of GaN films were investigated systemically.Atomic f...
%K GaN ?lms
%K silicon
%K metal bonding
%K laser lift-o?
%K atomic force microscopy
%K X-ray di?raction<br>氮化镓薄膜
%K 硅
%K 金属键合
%K 激光剥离
%K 原子力显微镜
%K X射线衍射
%K 光致发光谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5095C8840176C2C94B88385D4C6C08CE&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=59906B3B2830C2C5&sid=3702E75618BA974F&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0