%0 Journal Article
%T Degradation of ultra-thin gate oxide LDD NMOSFET under GIDL stress<br>GIDL应力下超薄栅氧LDD NMOS器件退化
%A Hu Shigang
%A Hao Yue
%A Cao Yanrong
%A Ma Xiaohu
%A Wu Xiaofeng
%A Chen Chi
%A Zhou Qingjun
%A <br>胡仕刚
%A 郝跃
%A 曹艳荣
%A 马晓华
%A 吴笑峰
%A 陈炽
%A 周清军
%J 半导体学报
%D 2009
%I 
%X The degradation of device under GIDL (gate-induced drain leakage current) stress has been studied using LDD NMOSFETs with 1.4 nm gate oxides. Experimental result shows that the degradation of device parameters depends more strongly on Vd than on Vg. The characteristics of the GIDL current are used to analyze the damage generated during the stress. It is clearly found that the change of GIDL current before and after stress can be divided into two stages. The trapping of holes in the oxide is dominant in the ...
%K GIDL
%K interface traps
%K direct tunneling
%K SILC<br>栅致漏极泄漏
%K 直接隧穿
%K 应力感应漏电流
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F0E7A062758AB117070BD5D742872DA1&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=E158A972A605785F&sid=C7CD02CDEEDD8893&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0