%0 Journal Article
%T Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition
%A 栗军帅
%A 王金晓
%A 尹旻
%A 高平奇
%A 贺德衍
%J 中国物理快报
%D 2006
%I 
%X Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350°C. Compared to the traditional annealing crystallization of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of Al atoms are detected in Si layer within the limit (<0.01 at.%) of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.
%K 72
%K 80
%K Jc
%K 52
%K 80
%K Yr<br>多晶硅膜
%K 电感耦合等离子体化学气相淀积
%K Al诱导晶化
%K 结晶生长
%K CVD
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=89C35610C02A09D768EFB368997F2B5B&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=59906B3B2830C2C5&sid=50421CCDF79CA9B6&eid=90B879DC37EC15DD&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=15